Static information storage and retrieval – Systems using particular element – Magnetoresistive
Patent
1999-06-18
2000-12-26
Le, Vu A.
Static information storage and retrieval
Systems using particular element
Magnetoresistive
365171, G11C 1100
Patent
active
061669474
ABSTRACT:
A manganese oxide material has MnO.sub.3 as a matrix. It is an antiferromagnetic insulator and, when subjected to an electrical current or electric field, it is transformed into a ferromagnetic metal.
REFERENCES:
patent: 5487356 (1996-01-01), Li et al.
patent: 5506077 (1996-04-01), Koksbang
patent: 6063491 (2000-05-01), Fujikata et al.
A. Asamitsu, Chemical Abstracts, vol. 127, No. 14, Oct. 6, 1997, AN:198170, "Current Switching of Resistive States in magnetoresistive Manganites".
Yasuhide Tomioka et al, "Anomalous Magnetotransport Properties of Pr.sub.1-x Ca.sub.x MnO.sub.3 ", Journal of the Physical Society of Japan, vol. 64, No. 10, Oct. 1995, pp. 3626-3630.
Y. Tomioka et al, "Magnetic-field-induced-metal-insulator phenomena in Pr.sub.1-x Ca.sub.x MnO.sub.3 with controlled charge-ordering instability", The American Physical Society, vol. 53, No. 4, Jan. 15, 1996, pp. R1689-R1692.
H. Kuwahara et al, "A First-Order Phase Transition Induced by a Magnetic Field", Science, vol. 270, Nov. 10, 1995, pp. 961-963.
Asamitsu Atsushi
Kuwahara Hideki
Tokura Yoshinori
Tomioka Yasuhide
Agency of Industrial Science and Technology Ministry of Internat
Angstrom Technology Partnership
Le Vu A.
Sanyo Electric Co,. Ltd.
LandOfFree
Manganese oxide material having MnO.sub.3 as a matrix does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Manganese oxide material having MnO.sub.3 as a matrix, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Manganese oxide material having MnO.sub.3 as a matrix will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1002193