Making metal silicide using oxide film

Details Making metal silicide using oxide film Making metal silicide using oxide film

1996-03-07

1997-09-09

Niebling, John

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438682, H01L 2128

Patent

active

056656475

ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of forming a silicon oxide film having a thickness of 5 nm or less on a silicon substrate or polysilicon film with a solution exhibiting an oxidation effect, forming a metal film on the silicon oxide film, and forming a silicide layer on the upper surface of the silicon substrate or polysilicon film by performing predetermined heat treatment.

REFERENCES:
patent: 4784973 (1988-11-01), Stevens et al.
patent: 5194405 (1993-03-01), Sumi et al.

Affiliated with

Also associated with

Rating

Making metal silicide using oxide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Making metal silicide using oxide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Making metal silicide using oxide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-69579