Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1993-03-31
1996-04-23
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257335, 257362, H01L 2976
Patent
active
055106412
ABSTRACT:
A power diode having substantially no reverse-recovery time and relatively high conductance. The power diode is a majority carrier semiconductor having a structure that is similar to that of a metal oxide semiconductor field effect transistor (MOSFET), in that it includes a source, a drain, a gate, and a body. In one embodiment, to increase conductance of the power diode, a linked-cell configuration that reverses the geometry of a conventional cell-type MOSFET is employed, thereby increasing the width of a conductance channel over that of a conventional MOSFET, and compensating for a relatively low level of inversion in the channel region. Negative and positive feedback circuits are used to further improve the conductance of the power diode by dynamically setting a bias voltage applied between the gate and the source to a level just below a threshold voltage. In the positive feedback circuit, the magnitude of the bias voltage is greater than the threshold voltage if the power diode is forward biased, but substantially reduced if the power diode is reverse biased, thereby minimizing its turn-on delay without risking reverse conductance. Although separate components are used for biasing the device in the disclosed embodiments, it is contemplated that these components be integrated on a common substrate with the source, drain, and gate in a commercially practiced preferred embodiment. Another embodiment employs a charge carrier region diffused into the body and at least in part underlying the gate. This region provides a variable threshold voltage along the channel and reduces the effective length of the channel to increase its conductance. A threshold voltage ranges between a higher value, V.sub.TMAX, adjacent the source, to a lower value, V.sub.T, elsewhere in the device.
REFERENCES:
patent: 5031008 (1991-07-01), Yoshida
Lauritzen Peter O.
Yee Hsian-Pei
Yee Sinclair S.
Anderson Ronald M.
Crane Sara W.
University of Washington
LandOfFree
Majority carrier power diode does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Majority carrier power diode, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Majority carrier power diode will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2310921