Magnetroresistive random access memory and method of...

Details Magnetroresistive random access memory and method of... Magnetroresistive random access memory and method of...

2007-05-08

2007-05-08

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S171000

Reexamination Certificate

active

11214869

ABSTRACT:
A magnetic memory includes a TMR element in its memory layer, wherein the TMR element in the memory layer has ferromagnetic layers which are kept in tensile strain, the ferromagnetic layers having either Fe, Co or Ni, and a wiring layer adjacent to each of the ferromagnetic layers includes either Ru, W, Ir, Os or Mo, thereby increasing the magnetization.

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M. Julliere; Physics Letters; Tunneling Between Ferromagnetic; 54A; 225; 1975.
Koichiro Inomata; Applied Physics 69; 186 : Japanese Society of Applied Physics; 2000.
M. Cerny, et al; Physical Review; B 67; 035116; The American Physical Society; 2003.

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