Magnetron with flux switching cathode and method of operation

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204298, C23C 1434

Patent

active

048657107

ABSTRACT:
A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.

REFERENCES:
patent: 3985635 (1976-10-01), Adam et al.
patent: 4336119 (1982-06-01), Gillery
patent: 4401539 (1983-08-01), Abe et al.
patent: 4415427 (1983-11-01), Hidler et al.
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4569746 (1986-02-01), Hutchinson
patent: 4588942 (1986-05-01), Kitahara

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetron with flux switching cathode and method of operation does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron with flux switching cathode and method of operation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron with flux switching cathode and method of operation will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-913978

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.