Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1988-03-31
1989-09-12
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
204298, C23C 1434
Patent
active
048657107
ABSTRACT:
A magnetron sputtering apparatus is formed with a plurality of cells each for generating an independent magnetic field within a different region in the chamber of the apparatus. Each magnetic field aids in maintaining an ion plasma in the respective region of the chamber. One of a plurality of sputtering material targets is positioned on an electrode adjacent to each region so that said ions strike the target ejecting some of the target material. By selectively generating each magnetic field, the ion plasma may be moved from region to region to sputter material from different targets. The sputtered material becomes deposited on a substrate mounted on another electrode within the chamber. The duty cycle of each cell can be dynamically varied during the deposition to produce a layer having a graded composition throughout its thickness.
REFERENCES:
patent: 3985635 (1976-10-01), Adam et al.
patent: 4336119 (1982-06-01), Gillery
patent: 4401539 (1983-08-01), Abe et al.
patent: 4415427 (1983-11-01), Hidler et al.
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4569746 (1986-02-01), Hutchinson
patent: 4588942 (1986-05-01), Kitahara
Aaron David B.
Wiley John D.
Nguyen Nam X.
Wisconsin Alumni Research Foundation
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