Magnetron sputtering target for reduced contamination

Details Magnetron sputtering target for reduced contamination Magnetron sputtering target for reduced contamination

1998-01-08

2000-09-12

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419212, 20419215, 2041922, 20429812, 20429813, 20429819, G23C 1434

Patent

active

061172812

ABSTRACT:
A magnetron sputtering target is formed with a plurality of radially extending circumferential grooves to reduce particle contamination during sputtering. The grooves attract redeposited sputter material which is quickly resputtered during the early stages of fine particle nucleation.

REFERENCES:
patent: 4834860 (1989-05-01), Demaray et al.
patent: 5244554 (1993-09-01), Yamagata et al.
patent: 5298720 (1994-03-01), Cuomo et al.
patent: 5632869 (1997-05-01), Hurwitt et al.
Selwyn et al., "Trapping and Behavior of Particulates in an RF Magnetron Plasma Etching Tool", J. Vac. Sci. Technol. A, 11, 1132-1135 (1993).
Selwyn et al., "Plasma Particulate Contamination Control: II. Self-Cleaning Tool Design", J. Vac. Sci. Technol. A, 10, 1053-1059 (1992).

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