Magnetron sputtering source and method of use thereof

Details Magnetron sputtering source and method of use thereof Magnetron sputtering source and method of use thereof

1996-10-07

1999-12-07

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429818, 20429819, C23C 1434

Patent

active

059976977

ABSTRACT:
A magnetron sputtering source and a method of use thereof on which the sputtering source has at least two toroidal magnetron electron taps each defining a maximum of a magnetic field strength component in a radial direction along a surface of the sputtering source. Thereby, from each one of a ring zone on a first smaller radius R.sub.1F and a second larger radius R.sub.2F, a plane of the workpiece in a holder facing the sputtering source has a corresponding distance d.sub.1 and d.sub.2. A value d assumes all possible values of d1 and d2. In particular,

REFERENCES:
patent: 5164063 (1992-11-01), Brauer et al.
patent: 5688381 (1997-11-01), Gruenenfelder et al.
International Search Report dated Jun. 20, 1996.

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