Magnetron sputtering method and sputtering target

Details Magnetron sputtering method and sputtering target Magnetron sputtering method and sputtering target

1996-03-08

2000-03-07

McDonald, Rodney

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20429812, 20429813, 20429819, C23C 1434

Patent

active

06033536&

ABSTRACT:
A magnetron sputtering method using a sputtering target consisting of a material having a maximum relative magnetic permeability of 50 or more or consisting of a soft magnetic material which contains two or more phases selected from the group consisting of an M--X alloy phase, an M phase, and an X phase in that at least the simple substance phase consisting of an element having a smaller atomic weight of M and X is included, with the proviso that M.noteq.X, M is at least one element selected from the group consisting of Fe, Co and Ni, and X is at least one element selected from the group consisting of Fe, Al, Si, Ta, Zr, Nb, Hf and Ti.

REFERENCES:
patent: 4324631 (1982-04-01), Meckel et al.
patent: 4620872 (1986-11-01), Hijikata et al.
patent: 4994320 (1991-02-01), Jagielinski
patent: 5421915 (1995-06-01), Nakanishi et al.
E. Schultheiss, et al., "Effects of Target Structure on the Properties of MO Recording Media Produced in a Large-Scale Vertical In-Line Sputtering System", IEEE Transactions on Magnetics, vol. 24, No. 6, (pp. 2772-2774), Nov. 1988.
T. Nate, et al., "Preparation of the Alloy Target for Magneto-Optical Recording Media", IEEE Transactions on Magnetics, vol. 24, No. 6, Nov. 1988.

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