Magnetron sputtering method and apparatus

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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204298200, C23C 1435

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active

049716743

ABSTRACT:
A magnetron sputtering apparatus is herein disclosed, the apparatus comprising a first solenoid coil for generating a first magnetic field, which is disposed on a back side of a sputtering target and a second solenoid coil for generating a second magnetic field which exerts influences on the first magnetic field, which is disposed in the vicinity of the outer periphery of the sputtering target, the magnitude and direction of each current applied to the first and second solenoid coils being changed to continuously move a plasma ring formed on the surface of the sputtering target towards the radial direction, to thus contact and expand the plasma ring; and the magnitude and direction of each current applied to the first and second solenoid coils being appropriately set to a desired value to hold the plasma ring at a desired location in the radial direction for a desired time period. When sputtering is performed using this apparatus, the location of the plasma ring formed on the target surface in the radial direction can effectively be controlled over a sufficiently wide region.

REFERENCES:
patent: 4275126 (1981-06-01), Bergmann et al.
patent: 4401539 (1983-08-01), Abe
patent: 4444635 (1984-04-01), Kobayashi et al.
patent: 4810346 (1989-03-01), Wolf et al.
patent: 4865710 (1989-09-01), Aaron et al.
T. Hata et al., Proceedings 15th Electrical Electronics Insulation Conference (1981), pp. 314-317.

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