Magnetron sputtering apparatus and thin film depositing method

Details Magnetron sputtering apparatus and thin film depositing method Magnetron sputtering apparatus and thin film depositing method

1991-02-27

1992-06-09

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

2042982, C23C 1435

Patent

active

051204177

ABSTRACT:
A magnetron cathode sputtering apparatus for providing an increased strength of the rotating magnetic field around the center area of a target when the sputtering occurs at the target, thereby reducing any dust particles that might settle on the center target area and might travel toward a wafer or each individual substrate thereon to form or deposit a thin film containing defects such as pin holes on the wafer. A magnetron cathode sputtering method uses such apparatus to form or deposit a thin film layer on the wafer, with its distribution within .+-.5% of the calculated value, and provides an improved step coverage for contact holes formed in each individual substrate of the wafer, from which irregularities can be substantially eliminated.

Affiliated with

Also associated with

Rating

Magnetron sputtering apparatus and thin film depositing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron sputtering apparatus and thin film depositing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron sputtering apparatus and thin film depositing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1802451