Magnetron sputtering apparatus and process

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20419215, 20419226, 20419227, 204298, C23C 1434

Patent

active

048510955

ABSTRACT:
A rotary cylindrical sputtering system incorporates separate, separately-controlled linear magnetron sputter cathode and reaction zones for sputter depositing materials such as refractory metals and forming oxides and other compounds and alloys of such materials. The associated process involves rotating or translating workpieces past the differentially pumped, atmospherically separated, sequentially or simultaneously operated cathode and reaction zones and is characterized by the ability to form a wide range of materials, by high throughput, and by controlled coating thickness, including both constant and selectively varied thickness profiles.

REFERENCES:
patent: 3635811 (1972-01-01), Lane
patent: 3829373 (1974-08-01), Kuehnle
patent: 4142958 (1979-03-01), Wei et al.
patent: 4361472 (1982-11-01), Morrison
patent: 4420385 (1983-12-01), Hartsough
patent: 4424103 (1984-01-01), Cole
patent: 4637869 (1987-01-01), Glocker et al.
patent: 4661229 (1987-04-01), Hemming et al.
patent: 4674621 (1987-06-01), Takahashi
patent: 4675096 (1987-06-01), Tateishi et al.
patent: 4692233 (1987-09-01), Casey
W. W. Anderson et al., Proceedings, 2nd E.C. Photovoltaic Solar Energy Conf. (1979), pp. 890-897.
Todorov et al., "Oxidation of Silicon by a Low-Energy Ion Beam: Experiment and Model", Appl. Phys. Lett., vol. 52, No. 1, Jan. 4, 1988, pp. 48-50.
Schiller et al., "Alternating Ion Plating-A Method of High-Rate Ion Vapor Deposition", J. Vac. Sci. Technol., vol. 12, No. 4, Jul./Aug. 1975, pp. 858-864.
Makous et al, "Superconducting and Structural Properties of Sputtered Thin Films of YBa.sub.2 Cu.sub.3 O.sub.7-x ", Appl. Phys. Lett. 51 (25), Dec. 21, 1987, pp. 2164-2166.
Schiller et al., "Reactive D.C. Sputtering with the Magnetron-Plasmatron for Tantalum Pentoxide and Titanium Dioxide Films", Thin Solid Films, vol. 63 (1979), pp. 369-375.
Schiller et al., "Advances in High Rate Sputtering with Magnetron-Plasmatron Processing and Instrumentation", Thin Solid Films, vol. 64 (1979), pp. 455-467.
Scherer et al., "Reactive High Rate D.C. Sputtering of Oxides", Paper presented at International Conference on Metallurgical Coatings, San Diego, Calif., Apr. 9-13, 1984.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetron sputtering apparatus and process does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron sputtering apparatus and process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron sputtering apparatus and process will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2356100

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.