Magnetron sputtering apparatus

Details Magnetron sputtering apparatus Magnetron sputtering apparatus

2011-05-17

2011-05-17

McDonald, Rodney G (Department: 1724)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298200, C204S298190

Reexamination Certificate

active

07943016

ABSTRACT:
The magnetron sputtering arrangement (2) comprises a target arrangement (3) comprising a target (3a1) having a sputtering surface (4) the shape of which defines a first (A1and a second axis (A2) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the sputtering surface; a magnet arrangement (40) generating a magnetic field above said sputtering surface; and a drive (70) adapted to establishing a substantially transitional relative movement between said magnetron magnetic field and said sputtering surface. Said relative movement describes a path (80) defining a third (A3) and a fourth axis (A4) being mutually perpendicular and being, at least approximately, axes of mirror-symmetry of the path (80). Said third axis is at least approximately parallel to said first axis (A3), and said path (80) has at least two pointed corners (81), each corner located on one of said third axis (A3) and said fourth axis (A4). Preferably, the relative movement is a repetitive movement, and preferably the path describes substantially the shape of a rhombus. The magnetron sputtering arrangement (2) may comprise at least two of said target arrangements (3), magnet arrangements (40) and drives (70).

REFERENCES:
patent: 5833815 (1998-11-01), Kim et al.
patent: 2005/0145478 (2005-07-01), Tepman

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