Magnetron sputtering apparatus

Details Magnetron sputtering apparatus Magnetron sputtering apparatus

1999-08-17

2000-12-05

Diamond, Alan

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20429816, 20429817, 20429819, 2042982, 20429822, 20429826, C23C 1434

Patent

active

061561703

ABSTRACT:
This invention provides a magnetron sputtering apparatus for forming a thin film on a substrate by adhering metal atoms or ions evaporated from a magnetron evaporation source to the substrate, which comprises at least one magnetron evaporation source and at least one auxiliary magnetic pole provided on the circumference of the substrate to generate magnetic lines of force surrounding the substrate. According to this invention, only one kind of magnetron magnetic field structure suffices for the magnetron evaporation sources, a desired sealing magnetic field can be formed regardless of the number or arrangement of the magnetron evaporating sources, and the form of the sealing magnetic field can be easily changed.

REFERENCES:
patent: 4880515 (1989-11-01), Yoshikawa et al.
patent: 5022978 (1991-06-01), Hensel et al.
patent: 5196105 (1993-03-01), Feuerstein et al.
patent: 5277778 (1994-01-01), Daube et al.
patent: 5284564 (1994-02-01), Maass
patent: 5556519 (1996-09-01), Teer
patent: 5961773 (1999-10-01), Ichimura et al.

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