Magnetron sputtered metallization of a nickel silicon alloy,...

Details Magnetron sputtered metallization of a nickel silicon alloy,... Magnetron sputtered metallization of a nickel silicon alloy,...

2008-01-22

2008-01-22

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular chip input/output means

C257SE29143, C257SE29139, C257S203000, C438S612000, C438S613000, C438S614000, C438S615000

Reexamination Certificate

active

11077943

ABSTRACT:
A nickel silicon alloy barrier layer formed between a metal bonding pad on an integrated circuit and a tin-based solder ball, for example, a lead-free solder. The nickel silicon alloy contains at least 2 wt % silicon and preferably less than 20 wt %. An adhesion layer may be formed between the barrier layer and the bonding pad. For copper metallization, the adhesion layer may contain titanium or tantalum; for aluminum metallization, it may be aluminum. The nickel silicon alloy may be deposited by magnetron sputtering. Commercially available NiSi4.5% sputter targets have provided a superior under-bump metallization (UBM) with lead-free tin solder bumps. Dopants other than silicon/may be used to reduce the magnetic permeability and provide other advantages of the invention.

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Sundar Ramamurthy et al., “Nickel silicide formation using low-temperature spike anneal”,Solid State Technology, Oct. 2004, 37-38, 40 pp.

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