Magnetron sputtered boron films and TI/B multilayer structures

Details Magnetron sputtered boron films and TI/B multilayer structures Magnetron sputtered boron films and TI/B multilayer structures

1991-03-11

1993-04-20

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419226, 20419227, C23C 1435

Patent

active

052039773

ABSTRACT:
A method is described for the production of thin boron and titanium/boron films by magnetron sputter deposition. The amorphous boron films contain no morphological growth features, unlike those found when thin films are prepared by various physical vapor deposition processes. Magnetron sputter deposition method requires the use of a high density crystalline boron sputter target which is prepared by hot isostatic pressing. Thin boron films prepared by this method are useful for ultra-thin band pass filters as well as the low Z element in low Z/high Z mirrors which enhance reflectivity from grazing to normal incidence.

REFERENCES:
patent: 4177474 (1979-12-01), Ovshinsky
D. M. Makowiecki et al., J. Vac. Sci. Technol., A8(6), Nov./Dec., 1990, pp. 3910-3913.

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