Magnetron sputter ion plating

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

20429819, 20429818, 20429805, 20429806, 20429826, 427523, 427524, 427528, C23C 1435

Patent

active

055565190

ABSTRACT:
A magnetron sputter ion plating system has two or more magnetron assemblies spaced around a substrate centrally located relative to the magnetrons. The magnetrons are arranged so that adjacent magnetrons have outer magnetic assemblies of opposite polarity, so that magnetic field lines link adjacent magnetrons, so as to produce a substantially closed ring of magnetic flux. This substantially traps all electrons generated in the system, and increase the level of ionization surrounding the substrates increasing the ion bombardment of the substrates. Several embodiments are disclosed.

REFERENCES:
patent: 4692230 (1987-09-01), Nihei et al.
patent: 4756810 (1988-07-01), Lamont, Jr. et al.
patent: 4767516 (1988-08-01), Nakatsuka et al.
patent: 4871434 (1989-10-01), Munz et al.
patent: 4880515 (1989-11-01), Yoshikawa et al.
patent: 5013419 (1991-05-01), Rickerby et al.
patent: 5196105 (1993-03-01), Feuerstein et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Magnetron sputter ion plating does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetron sputter ion plating, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron sputter ion plating will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-410952

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.