Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1988-06-16
1989-09-12
Weisstuch, Aaron
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
2041922, 204298, C23C 1434
Patent
active
048657093
ABSTRACT:
A magnetron sputter apparatus according to the present invention is constructed so as to satisfy a predetermined optimum relationship between the size of the erosion area on the surface of the target and that of a film forming region. Further, the distance between the target and substrates has a value predetermined for the relationship between the size of the erosion area on the surface of the target and that of the film forming region. By using the magnetron sputter apparatus according to the present invention it is possible to form a homogeneous thin film excellent in step coverage and having a film thickness distribution in which variations are small over a large area.
REFERENCES:
patent: 4025410 (1977-05-01), Stewart
patent: 4581118 (1986-04-01), Class et al.
Kamei Mitsuhiro
Nakagawa Yukio
Natsui Ken'ichi
Ohshita Youichi
Sato Tadashi
Hitachi , Ltd.
Weisstuch Aaron
LandOfFree
Magnetron sputter apparatus and method for forming films by usin does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetron sputter apparatus and method for forming films by usin, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetron sputter apparatus and method for forming films by usin will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-913973