Magnetron plasma processing apparatus and processing method

Details Magnetron plasma processing apparatus and processing method Magnetron plasma processing apparatus and processing method

1991-09-27

1994-12-27

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

156643, 118723E, 20429816, 20429815, H01L 2100

Patent

active

053762118

ABSTRACT:
A magnetron plasma processing apparatus including a vacuum chamber storing an object to be etched, a first electrode provided in the vacuum chamber to hold the object, a second electrode disposed to one side of the first electrode, where the first and second electrodes are in parallel with each other, a gas-supply unit feeding etching gas to the vacuum chamber, a magnetic-field generating means including a magnetic block disposed outside the chamber on the opposite side of the second electrode and rotatable about an axis normal to the object held by the first electrode, and a power-supply unit which feeds power to either of the first and second electrodes and generates discharge between these parallel electrodes. The magnetic block has end surfaces provided with magnetic poles having polarity inverse from each other, and in addition, a plane recess opposite from the second electrode is provided between the magnetic poles.

REFERENCES:
patent: 4581118 (1986-04-01), Class
patent: 4657619 (1987-04-01), O'Donnell
patent: 4842707 (1989-06-01), Kinoshita
patent: 5079481 (1992-01-01), Moslehi
patent: 5160398 (1992-11-01), Yanagida
patent: 5223113 (1993-06-01), Kaneko et al.
Patent Abstract of Japan, vol. 5, No. 195 (C-083) 11 Dec. 1981 & JP-A-56 116 880 (Toshiba Corp.) 12 Sep. 1981.
Patent Abstract of Japan, vol. 10, No. 325 (E-451) 6 Nov. 1986 & JP-A-61 133 631 (Matsushita Electric Ind.) 20 Jun. 1986.
Patent Abstract of Japan, vol. 10, No. 309 (E-447) (2365) 21 Oct. 1986 & JP-A-61 121 440 (Matsushita Electric Ind.) 9 Jun. 1986.

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