Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1999-10-01
2000-10-17
Diamond, Alan
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419212, 20419216, 20419217, 20419222, 20429819, 2042982, 20429812, 20429821, 20429822, 20429827, 330 47, 331154, 331157, 315 2951, 315 32, C23C 1435
Patent
active
061325651
ABSTRACT:
A magnetron assembly for sputter deposition and a method for using such assembly are described. The novel magnetron assembly is equipped with traversing magnets that are capable of moving in a radial direction toward and away from a center axis of the magnetron simultaneously with the rotational motion of the assembly. The traversing magnets enables a substantially uniform magnetic flux distribution to be formed which leads to not only a more uniform film deposition on a wafer surface, but also a more uniformly consumed metal target surface leading to a longer target life. The non-uniformity of a film deposited in a metal sputtering process frequently seen when using a conventional magnetron assembly is substantially eliminated.
REFERENCES:
patent: 5188717 (1993-02-01), Broadbent et al.
patent: 5314597 (1994-05-01), Harra
patent: 5795451 (1998-08-01), Tan et al.
patent: 5830327 (1998-11-01), Kolenkow
Diamond Alan
Taiwan Semiconductor Manufacturing Company Ltd
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