Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-10-13
2010-10-26
Yoha, Connie C (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000, C365S145000
Reexamination Certificate
active
07821818
ABSTRACT:
The magnetic device comprises a magnetic device comprising a magnetoresistive tunnel junction (100), itself comprising: a reference magnetic layer (120) having magnetization in a direction that is fixed; a storage magnetic layer (110) having magnetization in a direction that is variable; and an intermediate layer (130) acting as a tunnel barrier that is essentially semiconductor or electrically insulating and that separates the reference magnetic layer (120) from the storage magnetic layer (110). The potential profile of the intermediate layer (130) is asymmetrical across the thickness of said layer (130) so as to produce a current response that is asymmetrical as a function of the applied voltage. The device is applicable to magnetic random access memories.
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Dieny Bernard
Faure-Vincent Jérôme
Jamet Matthieu
Samson Yves
Vedyaev Anatoly
Centre National de la Recherche Scientifique "CNRS"
Comissariat a l'Energie Atomique et aux Energies Alternatives
Weingarten Schurgin, Gagnebin & Lebovici LLP
Yoha Connie C
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