Static information storage and retrieval – Systems using particular element – Magnetostrictive or piezoelectric
Reexamination Certificate
2007-09-17
2010-02-02
Le, Vu A (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetostrictive or piezoelectric
C365S158000
Reexamination Certificate
active
07656700
ABSTRACT:
A memory cell includes a magnetoresistive sensor that comprises layers that include a free layer. The magnetoresistive sensor conducts a read current representative of data stored in the memory cell during a read interval. A first write conductor carries a write current that writes data in the free layer. At least one of the layers comprises a multiferroic layer formed of multiferroic material.
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Bohn David C.
Le Vu A
Seagate Technology LLC
Westman Champlin & Kelly P.A.
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