Magnetoresistive sensor circuit with high output voltage swing a

Details Magnetoresistive sensor circuit with high output voltage swing a Magnetoresistive sensor circuit with high output voltage swing a

1992-09-02

1995-03-28

O'Shea, Sandra L.

Electricity: measuring and testing

Magnetic

Displacement

32420712, 324235, 32420723, 327510, 327513, G01B 714, G01R 3309

Patent

active

054020646

ABSTRACT:
A magnetoresistor (MR) and a non-magnetoresistor (NMR) are formed of indium antimonide or other magnetoresistive material in thermal proximity to each other on an integrated circuit substrate (100). Hall effect shorting strips (104) are formed on the magnetoresistor (MR) to make it much more magnetoresistive than the non-magnetoresistor (NMR). A current mirror (80) causes equal constant currents (I2) which do not vary with temperature to flow through the magnetoresistor (MR) and non-magnetoresistor (NMR), such that magnetoresistor and non-magnetoresistor voltages are developed thereacross respectively. The magnetoresistor and non-magnetoresistor voltages vary equally in accordance with temperature. The magnetoresistor voltage also varies in accordance with applied magnetic flux. A comparator (66) subtracts the non-magnetoresistor voltage from the magnetoresistor voltage to produce an output signal (Vout) with the temperature variation canceled, and which thereby varies only in accordance with magnetic flux. The current mirror (80) has an essentially infinite equivalent load impedance, such that the magnetoresistor voltage varies to a maximum possible extent with variation of the resistance of the magnetoresistor (MR) and the sensor (70) has a maximum possible output voltage swing.

REFERENCES:
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patent: 4359685 (1982-11-01), Eguchi et al.
patent: 4480248 (1984-10-01), Sudo et al.
patent: 4521727 (1985-06-01), Atherton et al.
patent: 4727270 (1988-02-01), Payne
patent: 4727323 (1988-02-01), Zabler
patent: 5038130 (1991-08-01), Eck
patent: 5168244 (1992-12-01), Muranaka
patent: 5168274 (1992-12-01), Wakamatsu

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