Magnetoresistive random access memory with shared word and digit

Details Magnetoresistive random access memory with shared word and digit Magnetoresistive random access memory with shared word and digit

1998-07-20

1999-08-31

Phan, Trong

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, G11C 1100, G11C 1114

Patent

active

059462272

ABSTRACT:
A high speed and high density magnetoresistive random access memory (MRAM) device (30) is provided. The MRAM device employs a poly-silicon word line (39a) that saves wiring space. Further, the word line is connected to a digit line (38a) by a connecting line (44a) which reduces a electrical resistance between transistors (43a) and (40a). Arrangement of the connecting line reduces a transmission time from a digit current control (33a) to transistor (43a) and greatly improves a memory cycle time.

REFERENCES:
patent: 5587943 (1996-12-01), Torok et al.
patent: 5732016 (1998-03-01), Chen et al.
patent: 5748519 (1998-05-01), Tehrani et al.
patent: 5838608 (1998-11-01), Zhu et al.

Affiliated with

Also associated with

Rating

Magnetoresistive random access memory with shared word and digit does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive random access memory with shared word and digit, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive random access memory with shared word and digit will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2427893