Magnetoresistive random access memory with high current density

Details Magnetoresistive random access memory with high current density Magnetoresistive random access memory with high current density

2005-02-23

2009-12-01

Nguyen, Dao H (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07626221

ABSTRACT:
The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

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