Magnetoresistive random access memory (MRAM) with on-chip...

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

06865104

ABSTRACT:
A magnetoresistive random access memory (MRAM) cell array device, which may be embodied in a resistive cross point memory (RXPtM) device, includes a chip (i.e., substrate) on which is formed an array of MRAM cells. Preferably, formed on this same chip is a controller effecting a setup algorithm for determining a most preferable write current (or currents) to be used in writing binary data bits into memory cells of the array while preserving data previously written into other memory cells of the array.

REFERENCES:
patent: 6603677 (2003-08-01), Redon et al.
patent: 6608790 (2003-08-01), Tran et al.

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