Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2005-03-08
2005-03-08
Hoang, Huan (Department: 2818)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
06865104
ABSTRACT:
A magnetoresistive random access memory (MRAM) cell array device, which may be embodied in a resistive cross point memory (RXPtM) device, includes a chip (i.e., substrate) on which is formed an array of MRAM cells. Preferably, formed on this same chip is a controller effecting a setup algorithm for determining a most preferable write current (or currents) to be used in writing binary data bits into memory cells of the array while preserving data previously written into other memory cells of the array.
REFERENCES:
patent: 6603677 (2003-08-01), Redon et al.
patent: 6608790 (2003-08-01), Tran et al.
Hewlett--Packard Development Company, L.P.
Hoang Huan
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