Magnetoresistive random access memory (MRAM) cell having a...

Details Magnetoresistive random access memory (MRAM) cell having a... Magnetoresistive random access memory (MRAM) cell having a...

2005-09-13

2005-09-13

Le, Vu A. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

06944052

ABSTRACT:
In a magnetoresistive random access memory (MRAM), a magnetic tunnel junction (MTJ) (54) cell is stacked with an asymmetric tunnel device (56). This device, when used in a crosspoint MRAM array, improves the sensing of the state or resistance of the MTJ cells. Each MTJ cell has at least two ferromagnetic layers (42, 46) separated by an insulator (44). The asymmetric tunnel device (56) is electrically connected in series with the MTJ cell and is formed by at least two conductive layers (48, 52) separated by an insulator (50). The asymmetric tunnel device may be a MIM (56), MIMIM (80) or a MIIM (70). Asymmetry results from conducting electrons in a forward biased direction at a significantly greater rate than in a reversed biased direction. Materials chosen for the asymmetric tunnel device are selected to obtain an appropriate electron tunneling barrier shape to obtain the desired rectifying current/voltage characteristic.

REFERENCES:
patent: 6256247 (2001-07-01), Perner
patent: 6259644 (2001-07-01), Tran
patent: 6331944 (2001-12-01), Monsma
patent: 2002/0114112 (2002-08-01), Nakashio et al.
Zhang et al., “A Novel Self-Aligned Bidirectional MIM Diode with Transparent Junctions for AM-LCD's,” IEEE Electron Device Letters, vol. 19, No. 6, Jun. 1998, pp. 192-194.

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