Magnetoresistive random access memory device providing simultane

Details Magnetoresistive random access memory device providing simultane Magnetoresistive random access memory device providing simultane

1998-04-07

1999-11-16

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, G11C 1100

Patent

active

059869259

ABSTRACT:
A magnetoresistive random access memory (MRAM) having a novel circuit configuration (40) is provided. The MRAM device includes a plurality of magnetic memory cells in a memory array (41). The magnetic memory cell includes magnetoresistive layers separated by an insulating layer which forms a tunneling junction between the magnetoresistive layers. A sense line selector (42, 43) selects two memory cells (48) in which a sense current (66) is applied from a current source (45). Voltages generated over the memory cells are sensed and compared to predetermined threshold voltages to provide outputs (OUT1, OUT2) which correspond to states stored in the pair of the memory cells (48). This new MRAM device attains non-volatile random access memory with high-speed and high-density.

REFERENCES:
patent: 5699293 (1997-12-01), Tehrani et al.
patent: 5734605 (1998-03-01), Zhu et al.
patent: 5748519 (1998-05-01), Tehrani et al.

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