Magnetoresistive random access memory device and method of manuf

Details Magnetoresistive random access memory device and method of manuf Magnetoresistive random access memory device and method of manuf

1998-03-31

1999-08-10

Nelms, David

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365157, 365170, 365171, 365173, G11C 1100

Patent

active

059368829

ABSTRACT:
A Magnetoresistive Random Access Memory (MRAM) device (10) and a method for manufacturing the MRAM device (10). The MRAM device (10) has a plurality of pairs of sense lines (21A, 21B, 22A, 22B, 23A, 23B, 24A, 24B), a plurality of pairs of memory cells (51A, 51B), and a plurality of word lines (31, 32, 33, 34). For two adjacent sense lines (21A, 22A), a first end of the first sense line (21A) is placed adjacent to a second end of the second sense line (22A) and a second end of the first sense line (21A) is placed adjacent to a first end of the second sense line (22A). Decoding transistors (82, 83, 84, 85, 86, 87, 88, 89) are connected to the second ends of the plurality of pairs of sense lines (21A, 21B, 22A, 22B, 23A, 23B, 24A, 24B).

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"1-Mb Memory Chip Using Giant Magnetoresistive Memory Cells" by J.L. Brown, Member IEEE and A.V. Pohm, Fellow, IEEE.

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