Magnetoresistive random access memory, and manufacturing...

Details Magnetoresistive random access memory, and manufacturing... Magnetoresistive random access memory, and manufacturing...

2006-08-22

2006-08-22

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C365S157000, C365S171000, C365S173000

Reexamination Certificate

active

07095069

ABSTRACT:
The present invention discloses a magnetoresistive random access memory (MRAM) and a manufacturing method thereof. The whole cells are connected to each other by using a substrate as a ground terminal and a vertical structure field effect transistor (FET) for connecting the cells to the bit line. Thus, the MRAM is easily manufactured without requiring a special process for isolation of each cell. The MRAM uses the vertical structure FET to simplify the whole manufacturing process. An MTJ cell mask process which is essential in a general horizontal structure FET is omitted, to improve a speed of the MRAM and attain high integration of the MRAM.

REFERENCES:
patent: 5940319 (1999-08-01), Durlam et al.
patent: 6175515 (2001-01-01), Peczalski et al.
patent: 2002/0140016 (2002-10-01), Cha
patent: 2003/0067800 (2003-04-01), Koganei
patent: 5226635 (1993-09-01), None
patent: 2002-0076460 (2002-10-01), None

Affiliated with

Also associated with

Rating

Magnetoresistive random access memory, and manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive random access memory, and manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive random access memory, and manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3693248