Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-09-20
2009-12-15
Zarabian, Amir (Department: 2827)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S046000, C365S048000, C365S055000, C365S145000, C365S147000
Reexamination Certificate
active
07633795
ABSTRACT:
A write control method for a magnetoresistive random access memory, which includes a memory cell having a recording layer with an axis of easy magnetization and an axis of hard magnetization. The write control method includes writing a datum into the memory cell. The writing of the datum includes applying a pulsative first magnetic field substantially parallel to the axis of easy magnetization of the recording layer and a pulsative second magnetic field substantially parallel to the axis of hard magnetization to the recording layer so as to cause a period of the pulsative first magnetic field and a period of the pulsative second magnetic field to overlap each other, and applying a pulsative third magnetic field having substantially the same direction as the pulsative first magnetic field to the recording layer at least once after applying the pulsative first magnetic field to the recording layer.
REFERENCES:
patent: 5841611 (1998-11-01), Sakakima et al.
patent: 6178112 (2001-01-01), Bessho et al.
patent: 6256222 (2001-07-01), Sakakima et al.
patent: 6256224 (2001-07-01), Perner et al.
patent: 6297987 (2001-10-01), Johnson et al.
patent: 6418046 (2002-07-01), Naji
patent: 6980469 (2005-12-01), Kent et al.
patent: 7286395 (2007-10-01), Chen et al.
patent: 2002/0145905 (2002-10-01), Hirai
patent: 2003/0123283 (2003-07-01), Amano et al.
patent: 2003/0185045 (2003-10-01), Drewes
patent: 2004/0027853 (2004-02-01), Huai et al.
patent: 2002-358775 (2002-12-01), None
patent: 2003-151260 (2003-05-01), None
patent: 2003-331574 (2003-11-01), None
patent: 2005-50424 (2005-02-01), None
U.S. Appl. No. 11/829,408, filed Jul. 27, 2007, Kitagawa, et al.
Kishi Tatsuya
Shimomura Naoharu
Takizawa Ryousuke
Hidalgo Fernando N
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Zarabian Amir
LandOfFree
Magnetoresistive random access memory and its write control... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Magnetoresistive random access memory and its write control..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive random access memory and its write control... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4106938