Magnetoresistive random access memory and driving method...

Details Magnetoresistive random access memory and driving method... Magnetoresistive random access memory and driving method...

2007-04-10

2007-04-10

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S050000

Reexamination Certificate

active

11067670

ABSTRACT:
The number of read errors can be reduced, and a large read signal can be produced. A method of driving a magnetoresistive random access memory including memory cells, a state of which is switched between binary resistance values using a single kind of write pulses is proposed, the method comprising: selecting a memory cell; reading a resistance value, which is one of the binary resistance values, of the selected memory cell, the resistance value read being defined as a first resistance value; performing a first write operation on the selected memory cell using the write pulse to change the resistance value of the selected memory cell to the other of the binary resistance values; reading the other of the binary resistance values, which is defined as a second resistance value; comparing the second resistance value with the first resistance value, and determining data originally stored in the selected memory cell based on the comparison result; and performing a second write operation on the selected memory cell using the write pulse to change the second resistance value of the selected memory cell to the first resistance value.

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U.S. Appl. No. 11/052,810, filed Feb. 9, 2005, Iwata.

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