Magnetoresistive random access memory

Details Magnetoresistive random access memory Magnetoresistive random access memory

2011-05-03

2011-05-03

Zarabian, Amir (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S121000, C365S131000, C365S171000, C365S173000, C365S189150, C365S230060, C365S233170

Reexamination Certificate

active

07936591

ABSTRACT:
A word line voltage is applied to a plurality of word lines. A read/write voltage is applied to a plurality of bit lines. The read/write voltage is applied to a plurality of source lines. A word line selector selects the word line and applies the word line voltage. A driver applies a predetermined voltage to the bit line and the source line, thereby supplying a current to the memory cell. A read circuit reads a first current having flowed through the memory cell, and determines data stored in the memory cell. When performing the read, the driver supplies a second current to second bit lines among other bit lines, which are adjacent to the first bit line through which the first current has flowed. The second current generates a magnetic field in a direction to suppress a write error in the memory cell from which data is to be read.

REFERENCES:
patent: 2007/0279963 (2007-12-01), Tsuchida et al.
patent: 2007/0285974 (2007-12-01), Takemura et al.
patent: 2009/0067212 (2009-03-01), Shimizu
patent: 2004-241013 (2004-08-01), None

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