Magnetoresistive memory including thin film storage cells having

Static information storage and retrieval – Systems using particular element – Magnetic thin film

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365158, G11C 1115

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047317574

ABSTRACT:
A digital memory based on a memory cell having two magnetoresistive ferromagnetic film portions separated by an intermediate layer all of which are gradually narrowed at the ends thereof.
Adjacent memory cells are preferrably arranged in a line with conductive junctions therebetween. The magnetic state of each cell can be sensed or set by providing currents of different magnitudes in conductive word lines which overlie the cells. The narrowed ends of the cells reduce demagnetizing effects which occur if the cell ends are abruptly terminated.

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