Magnetoresistive memory elements with separate read and...

Details Magnetoresistive memory elements with separate read and... Magnetoresistive memory elements with separate read and...

2007-11-29

2010-11-02

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S002000, C257S252000, C257S421000, C257S695000, C257SE21436, C257SE21663

Reexamination Certificate

active

07825445

ABSTRACT:
A magnetoresistive memory element has a free layer, and a write current path aligned with a free layer plane. The memory element has a pinned layer with a magnetization direction aligned with that of the free layer. A barrier layer is disposed between the free layer and the pinned layer. The free, barrier and pinned layers together form a layer stack that has a read current path that extends through the layer stack and that is not aligned with the write current path in the free layer.

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