Magnetoresistive memory devices

Details Magnetoresistive memory devices Magnetoresistive memory devices

2006-01-03

2006-01-03

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257S422000, C438S003000, C438S048000, C365S158000

Reexamination Certificate

active

06982450

ABSTRACT:
The invention includes a magnetoresistive memory device having a conductive core, and a first magnetic layer extending at least partially around the conductive core. A non-magnetic material is over at least a portion of the first magnetic layer and separated from the conductive core by at least the first magnetic layer. A second magnetic layer is over the non-magnetic material, and separated from the first magnetic layer by at least the non-magnetic material. The invention also includes methods of forming magnetoresistive memory devices.

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