Magnetoresistive memory cell with dynamic reference layer

Details Magnetoresistive memory cell with dynamic reference layer Magnetoresistive memory cell with dynamic reference layer

2008-05-06

2008-05-06

Elms, Richard T. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000, C365S171000, C365S130000

Reexamination Certificate

active

07369426

ABSTRACT:
The present invention relates to an arrangement for increasing a relative change in resistance of a magnetoresistive memory cell (17) having in each case a memory layer (1) and a reference layer (3) on both sides of a tunnel barrier (2), the reference layer (3) being fashioned as a magnetically soft layer, and the magnetization thereof, which can be influenced by write operations, being oriented correctly again by a reference backup field or a reference magnetization current (11).

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