Magnetoresistive memory cell

Details Magnetoresistive memory cell Magnetoresistive memory cell

2011-03-08

2011-03-08

Phung, Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

Reexamination Certificate

active

07903452

ABSTRACT:
A magnetoresistive memory cell has a magnetic stack providing an effective anisotropy field of a storage layer of the magnetic stack during thermal select heating, at least one line providing at least one external magnetic field to the magnetic stack, the effective anisotropy field and the at least one external magnetic field having a non-zero angle relative to one another.

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Kerekes, M., et al., “Dynamic Heating in Sub-Micron Size Magnetic Tunnel Junctions with Exchange Biased Storage Layer,” 3 pgs.
Wang, J., et al., “Low-Current Blocking Temperature Writing of Double-Barrier MRAM Cells,” IEEE Transactions on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2622-2624.
Prejbeanu, I.L., et al., “Thermally Assisted Switching in Exchange-Biased Storage Layer Magnetic Tunnel Junctions,” IEEE Transactions on Magnetics, vol. 40, No. 4, Jul. 2004, pp. 2625-2627.

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