Magnetoresistive element, magnetic memory cell, and magnetic...

Details Magnetoresistive element, magnetic memory cell, and magnetic... Magnetoresistive element, magnetic memory cell, and magnetic...

2006-06-20

2006-06-20

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

07064367

ABSTRACT:
The present invention provides a magneto-resistive element capable of stably performing information writing operation by efficiently using a magnetic field generated by current flowing in a conductor and to a magnetic memory device having the same. A magneto-resistive element is constructed so that the area of a cross section orthogonal to the circumferential direction of a pair of magnetic yokes becomes the smallest in connection parts facing stacked bodies. With the configuration, magnetic flux density of return magnetic fields generated by passing write current to write bit lines and write word lines can be made the highest in the connection parts. Thus, information can be written efficiently and stably.

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