Magnetoresistive element, magnetic memory cell, and magnetic...

Details Magnetoresistive element, magnetic memory cell, and magnetic... Magnetoresistive element, magnetic memory cell, and magnetic...

2006-04-11

2006-04-11

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S421000, C257SE21665, C257SE27006, C257SE29164, C257SE43001, C257SE21663, C257SE21208, C438S003000, C438S240000, C438S785000

Reexamination Certificate

active

07026677

ABSTRACT:
The present invention provides a magnetic memory device capable of performing stable operation efficiently using a magnetic field generated by write current and formed with high precision while realizing a compact configuration. Since a plating film is used for at least a part of a magnetic yoke, as compared with the case of formation by a dry film forming method, sufficient thickness and higher dimensional precision can be obtained. Consequently, a more stabilized return magnetic field can be generated and high reliability can be assured. Neighboring memory cells can be disposed at narrower intervals, so that the invention is suitable for realizing higher integration and higher packing density.

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