Magnetoresistive element and MRAM using the same

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

06853580

ABSTRACT:
An offset of the switching magnetic field of a memory layer caused by a static magnetic field from a pinned layer in a magnetoresistive element used as a memory element is suppressed. A first magnetic layer magnetized perpendicularly to the film surface, an insulating layer, and a second magnetic layer magnetized perpendicularly to the film surface form the magnetoresistive element. The coercive force of the second magnetic layer is higher than that of the first magnetic layer. Upon the flow of current between the first magnetic layer and the second magnetic layer via the insulating layer N2, the resistance changes depending on the relative angle in magnetization between the two magnetic layers. A magnetic field applied from the second magnetic layer2to the first magnetic layer1is set smaller than the coercive force of the first magnetic layer1.

REFERENCES:
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6104632 (2000-08-01), Nishimura
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6219275 (2001-04-01), Nishimura
patent: 6490190 (2002-12-01), Ramcke et al.
patent: 20010040819 (2001-11-01), Hayashi et al.
patent: 0959475 (1999-11-01), None
patent: 1115164 (2001-07-01), None
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell,” IEEE International Solid-State Circuits Conference: Digest of Technical Papers, Feb. 8, 2000, pp. 128-129.

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