Magnetoresistive element and MRAM using the same

Details Magnetoresistive element and MRAM using the same Magnetoresistive element and MRAM using the same

2005-02-08

2005-02-08

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06853580

ABSTRACT:
An offset of the switching magnetic field of a memory layer caused by a static magnetic field from a pinned layer in a magnetoresistive element used as a memory element is suppressed. A first magnetic layer magnetized perpendicularly to the film surface, an insulating layer, and a second magnetic layer magnetized perpendicularly to the film surface form the magnetoresistive element. The coercive force of the second magnetic layer is higher than that of the first magnetic layer. Upon the flow of current between the first magnetic layer and the second magnetic layer via the insulating layer N2, the resistance changes depending on the relative angle in magnetization between the two magnetic layers. A magnetic field applied from the second magnetic layer2to the first magnetic layer1is set smaller than the coercive force of the first magnetic layer1.

REFERENCES:
patent: 6055179 (2000-04-01), Koganei et al.
patent: 6104632 (2000-08-01), Nishimura
patent: 6166948 (2000-12-01), Parkin et al.
patent: 6219275 (2001-04-01), Nishimura
patent: 6490190 (2002-12-01), Ramcke et al.
patent: 20010040819 (2001-11-01), Hayashi et al.
patent: 0959475 (1999-11-01), None
patent: 1115164 (2001-07-01), None
Scheuerlein et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in each Cell,” IEEE International Solid-State Circuits Conference: Digest of Technical Papers, Feb. 8, 2000, pp. 128-129.

Affiliated with

Also associated with

Rating

Magnetoresistive element and MRAM using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive element and MRAM using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive element and MRAM using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3470637