Magnetoresistive element and memory element

Details Magnetoresistive element and memory element Magnetoresistive element and memory element

1996-08-14

1997-11-25

Nelms, David C.

Static information storage and retrieval

Systems using particular element

Magnetoresistive

365171, 360113, G11C 1115

Patent

active

056919360

ABSTRACT:
A magnetoresistive effect element having a large magnetoresistive change with a small magnetic field, and a memory element using the same. A semiconductor film to provide a window for excitation light is arranged on a substrate via a buffer layer. Another semiconductor film and a nonmagnetic metallic film (or a nonmagnetic insulating film) are arranged on the semiconductor film successively. A magnetic film having a square magnetization curve is arranged on the nonmagnetic metallic film (or a nonmagnetic insulating film). An electrode is arranged beneath the substrate and another electrode is arranged on the magnetic film. By radiating a laser light beam to the semiconductor film acting as a window, electrons having spin polarization are excited in the semiconductor film so as to utilize the dependency of the scattering of electrons at the surface of the magnetic film on the magnetization orientation of the magnetic film and the spin polarization state of the excited electrons.

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