Magnetoresistive element, and magnetic memory using the same

Details Magnetoresistive element, and magnetic memory using the same Magnetoresistive element, and magnetic memory using the same

2005-05-24

2005-05-24

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000, C365S180000, C365S158000

Reexamination Certificate

active

06898115

ABSTRACT:
A magnetoresistive film has at least a first magnetic layer, a second magnetic layer, a nonmagnetic layer, a third magnetic layer, and a fourth magnetic layer stacked in the order named. In the magnetoresistive film, at least the first magnetic layer contains Gd and the fourth magnetic layer contains Tb and/or Dy, each of the first magnetic layer and fourth magnetic layer has an easy axis of magnetization along a perpendicular direction to a film plane, and the second magnetic layer and the third magnetic layer have a greater spin polarization than the first magnetic layer and the fourth magnetic layer. Furthermore, the second and third magnetic layers are magnetic layers containing at least Co and Co contents thereof are not less than 20 at. % nor more than 90 at. %.

REFERENCES:
patent: 5801984 (1998-09-01), Parkin
patent: 5966323 (1999-10-01), Chen et al.
patent: 6022633 (2000-02-01), Hayashi et al.
patent: 6219275 (2001-04-01), Nishimura
patent: 6329078 (2001-12-01), Tsuge
patent: 6456467 (2002-09-01), Mao et al.
Patent Abstracts of Japan, for JPLAO 11-13587, published May 21, 1999.

Affiliated with

Also associated with

Rating

Magnetoresistive element, and magnetic memory using the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive element, and magnetic memory using the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive element, and magnetic memory using the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3388059