Magnetoresistive element and magnetic memory unit

Details Magnetoresistive element and magnetic memory unit Magnetoresistive element and magnetic memory unit

2005-04-12

2005-04-12

Lebentritt, Michael S. (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06879514

ABSTRACT:
In a magnetoresistive element which includes at least a pair of ferromagnetic layers stacked with having an intermediate layer inbetween and achieves a change in the magnetic resistance by permitting a current to flow in the direction which crosses the plane of the stacked layers, by virtue of having a construction wherein at least one ferromagnetic layer constituting an information recording layer has an amorphous structure containing a CoFeB or CoFeNiB alloy and has a plane form having a longer axis in one direction wherein both sides thereof along the longer axis direction form a straight line or a curved outward, and the both ends thereof in the longer axis direction form a curved or bent outward from, wherein the pattern form has an aspect ratio of 1:1.2 to 1:3.5, excellent asteroid curve having consistency in the properties can be stably obtained.

REFERENCES:
patent: 6480411 (2002-11-01), Koganei
patent: 6567246 (2003-05-01), Sakakima et al.
patent: 20020176277 (2002-11-01), Bessho et al.

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