Magnetoresistive element and magnetic memory

Details Magnetoresistive element and magnetic memory Magnetoresistive element and magnetic memory

2011-02-22

2011-02-22

Nguyen, Dang T (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S421000, C365S171000, C365S173000

Reexamination Certificate

active

07894246

ABSTRACT:
A magnetoresistive element includes: a magnetization free layer having a first plane and a second plane located on the opposite side from the first plane, and having a variable magnetization direction; a magnetization pinned layer provided on the first plane side of the magnetization free layer, and having a pinned magnetization direction; a first tunnel barrier layer provided between the magnetization free layer and the magnetization pinned layer; a second tunnel barrier layer provided on the second plane of the magnetization free layer; and a non-magnetic layer provided on a plane on the opposite side of the second tunnel barrier layer from the magnetization free layer. The magnetization direction of the magnetization free layer is variable by applying current between the magnetization pinned layer and the non-magnetic layer, and a resistance ratio between the first tunnel barrier layer and the second tunnel barrier layer is in a range of 1:0.25 to 1:4.

REFERENCES:
patent: 6256223 (2001-07-01), Sun
patent: 6801414 (2004-10-01), Amano et al.
patent: 6958927 (2005-10-01), Nguyen et al.
patent: 7307302 (2007-12-01), Saito
patent: 7547934 (2009-06-01), Saito
patent: 7596015 (2009-09-01), Kitagawa et al.
patent: 7598555 (2009-10-01), Papworth Parkin
patent: 7663197 (2010-02-01), Nagase et al.
patent: 2006/0038210 (2006-02-01), Lin et al.
patent: 2006/0233017 (2006-10-01), Hosotani et al.
patent: 2009/0251951 (2009-10-01), Yoshikawa et al.
patent: 2005-32878 (2005-02-01), None
patent: 2006-165059 (2006-06-01), None
patent: 2006-190838 (2006-07-01), None
English machine translation of JP2006-165059, retrieved from PAJ on Aug. 18, 2010. pp. 1-28.
U.S. Appl. No. 12/409,654, filed Mar. 24, 2009, Yoshikawa, et al.
U.S. Appl. No. 11/832,203, filed Aug. 1, 2007, Eiji Kitagawa, et al.
J.C. Slonczewski, “Current-driven excitation of magnetic multilayers”, Journal of Magnetism and Magnetic Materials, vol. 159, 1996, pp. L1-L7.
L. Berger, “Emission of spin waves by a magnetic multilayer traversed by a current”, Physical Review B, vol. 54, No. 13, Oct. 1, 1996, pp. 9353-9358.

Affiliated with

Also associated with

Rating

Magnetoresistive element and magnetic memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive element and magnetic memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive element and magnetic memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2648818