Magnetoresistive element

Details Magnetoresistive element Magnetoresistive element

2011-04-19

2011-04-19

Soward, Ida M (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S425000, C257SE29323, C257SE43001

Reexamination Certificate

active

07928524

ABSTRACT:
A magnetoresistive element is disclosed, wherein the magnetoresistive element is composed of a synthetic anti-ferromagnetic (SAF) structure that may include a first pinned layer, an intermediate layer, and a second pinned layer; and a Cr layer between the first pinned layer and the intermediate layer and/or the second pinned layer and the intermediate layer.

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