Magnetoresistive element

Details Magnetoresistive element Magnetoresistive element

2011-03-01

2011-03-01

Nguyen, Dao H (Department: 2818)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C257S295000

Reexamination Certificate

active

07898846

ABSTRACT:
A magnetoresistive element includes a first magnetic layer which includes a first surface and a second surface and has a first standard electrode potential, a second magnetic layer, a barrier layer which is provided between the second magnetic layer and the first surface of the first magnetic layer, and a nonmagnetic cap layer which contacts the second surface of the first magnetic layer and is formed from an alloy of a first metal material and a second metal material, the first metal material having a second standard electrode potential lower than the first standard electrode potential, the second metal material having a third standard electrode potential higher than the first standard electrode potential.

REFERENCES:
patent: 2005/0008849 (2005-01-01), Kagami et al.
patent: 2005/0276099 (2005-12-01), Horng et al.
patent: 2007/0047159 (2007-03-01), Zhao et al.
patent: 10-261209 (1998-09-01), None
patent: 2001-331908 (2001-11-01), None
patent: 2002-50011 (2002-02-01), None
patent: 2002-208119 (2002-07-01), None
patent: 2003-318462 (2003-11-01), None
patent: 2004-172599 (2004-06-01), None
patent: 2005-32780 (2005-02-01), None
patent: 2005-72608 (2005-03-01), None
U.S. Appl. No. 12/409,716, filed Mar. 24, 2009, Kitagawa, et al.

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