Magnetoresistive effect element and magnetic memory device

Details Magnetoresistive effect element and magnetic memory device Magnetoresistive effect element and magnetic memory device

2008-01-01

2008-01-01

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S295000, C257SE21665, C257SE29323

Reexamination Certificate

active

10480242

ABSTRACT:
Write characteristics and read characteristics can be improved at the same time by applying novel materials to ferromagnetic layers. In a magnetoresistive effect element having a pair of ferromagnetic layers being opposed to each other through an intermediate layer to cause a current to flow in the direction perpendicular to the film plane to obtain a magnetoresistive change, at least one of the ferromagnetic layers contains a ferromagnetic material containing Fe, Co and B. The ferromagnetic material should preferably contain FeaCobNicBd(in the chemical formula, a, b, c and d represent atomic %. 5≦a≦45, 35≦b≦85, 0<c≦35, 10≦d≦30. a+b+C+d=100).

REFERENCES:
patent: 6104632 (2000-08-01), Nishimura
patent: 6385082 (2002-05-01), Abraham et al.
patent: 6556473 (2003-04-01), Saito et al.
patent: 6831314 (2004-12-01), Higo et al.
patent: 6879514 (2005-04-01), Hosomi et al.
patent: 2002/0034055 (2002-03-01), Seyama
patent: 2002/0036876 (2002-03-01), Kawawake
patent: 2002/0058158 (2002-05-01), Odagawa
patent: 2002/0167766 (2002-11-01), Hayashi
patent: 959475 (1999-11-01), None
patent: 1031592 (2000-12-01), None
patent: 2000-76844 (2000-03-01), None
patent: 2000-101164 (2000-04-01), None
patent: 2000-187976 (2000-07-01), None
patent: 2001-237472 (2001-08-01), None
patent: 2002-092829 (2002-03-01), None
patent: 2002-176211 (2002-06-01), None
patent: 2003-060258 (2003-02-01), None
patent: 2003-133614 (2003-05-01), None
patent: 2001-0007428 (2001-01-01), None

Affiliated with

Also associated with

Rating

Magnetoresistive effect element and magnetic memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetoresistive effect element and magnetic memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetoresistive effect element and magnetic memory device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3941767