Magnetoresistive effect element and magnetic memory device

Details Magnetoresistive effect element and magnetic memory device Magnetoresistive effect element and magnetic memory device

2007-06-05

2007-06-05

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

10548830

ABSTRACT:
A magnetoresistive effect element includes a TMR element disposed at an intersection where a bit line and a write word line intersect, in a manner sandwiched between the bit line and the write word line, and is configured such that it includes a sensitive magnetic layer whose magnetization direction is changed by a synthetic magnetic field of magnetic fields generated around the bit line and the write word line, and at the same time such that electric current flows in a direction perpendicular to the laminating surfaces thereof, and a magnetic material individually covering the bit line and the write word line at the intersection, thereby forming an annular magnetic layer associated with the bit line and an annular magnetic layer associated with the write word line.

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English Language Abstract of JP 09-091949.
English Language Abstract of JP 2002-110938.
English Language Abstract of JP 2002-246566.
English Language Abstract of JP 2003-007985.
English Language Abstract of JP 2003-258209.
English Language Abstract of JP 2004-111887.
English Language Abstract of JP 2004-119638.
English Language Abstract of JP2000-090658.
English Language Abstract of JP2001-168417.
English Language Abstract of JP2001-230468.
English Language Abstract of JP2001-230469.
English Language Abstract of JP2001-230472.

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