Dynamic magnetic information storage or retrieval – Head – Hall effect
Patent
1997-06-13
1999-01-19
Heinz, A. J.
Dynamic magnetic information storage or retrieval
Head
Hall effect
G11B 539
Patent
active
058620214
ABSTRACT:
A magnetoresistive effect device is formed by layering a nonmagnetic Co oxide film, a pinned magnetization layer made of Co, a nonmagnetic layer made of Cu, a free magnetization layer made of NiFe in this order on a substrate made of glass or Si. By arranging the nonmagnetic Co oxide film in contact with the pinned magnetization layer, it is possible to produce a magnetoresistive effect device with a high saturation field and a high sensitivity.
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McGuire T.R. et al., "Effectiveness of Antiferromagnetic Oxide Exchange for Sandwich Layers", IEEE Transactions on Magnetics, vol. 29, No. 6, Nov. 1, 1993, pp. 2714-2716.
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Takashima et al., "Influences of Buffer Layers on the Magnetoresistance of Co/Cu/Co Films", Journal of Applied Magnetics Society of Japan, vol. 19, No. 2, 1995, pp. 381-384, with partial translation.
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McGuire et al., "Magnetization and Magnetoresistance of Co/Cu Layered Films", IEEE Transactions on Magnetics, vol. 28, No. 5, Sep. 1992, pp. 2748-2750.
McGuire et al., "Effectiveness of Antiferromagnetic Oxide Exchange for Sandwich Layers", IEEE Transactions of Magnetics, vol. 29, No. 6, Nov. 1993, pp. 2714-2716.
Deguchi Haruhiko
Fujita Noboru
Kira Tohru
Komoda Tomohisa
Nakabayashi Takaya
Conlin David G.
Heinz A. J.
Neuner George W.
Sharp Kabushiki Kaisha
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