Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-05-10
2011-05-10
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S009000, C257S296000, C365S173000, C427S131000
Reexamination Certificate
active
07939870
ABSTRACT:
A magnetoresistive device comprises a ferromagnetic region, a non-ferromagnetic region, an insulating region and a conductive region. The insulating region is arranged between the ferromagnetic region and the conductive region so as to provide a tunnel barrier. The non-ferromagnetic region separates the insulating region and the ferromagnetic region.
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Jungwirth Tomas
Maca Frantisek
Park Byong Guk
Shick Alexander
Wunderlich Joerg
Antonelli, Terry Stout & Kraus, LLP.
Hitachi , Ltd.
Wojciechowicz Edward
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